Prediction of barrier localization in modulated nanowires
نویسندگان
چکیده
It is shown that the phenomenon of inversion recently discovered in a one-band model [L. C. Lew Yan Voon and M. Willatzen, J. Appl. Phys. 93, 9997 (2003)] is much more general and is present in both multiband theories and in the excited states. Predictions of the one-band and of a four-band model are in good agreement for the ground state. A critical radius of around 15 Å s7 Åd is obtained for holes in InGaAs/ InP sGaAs/AlAsd modulated nanowires. This phenomenon should be readily observable in both optical spectroscopy and transport. © 2004 American Institute of Physics. [DOI: 10.1063/1.1792803]
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تاریخ انتشار 2004